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公開日期標題作者
8-四月-1991ENERGY-STATES OF FINITE-BARRIER QUANTUM WIRES IN THE PRESENCE OF AN EXTERNAL ELECTRIC-FIELDJUANG, C; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-十二月-1993ENHANCEMENT OF BAND-EDGE LUMINESCENCE IN HYDROGENATED STRAINED SI(0.84)GE(0.16)/SI QUANTUM-WELLS BY PHOTOCHEMICAL VAPOR-DEPOSITIONPAN, SC; CHEN, YF; CHANG, DC; CHANG, CY; WANG, PJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-七月-1995EPITAXY OF SI1-XGEX BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4CHEN, LP; CHOU, TC; TSAI, WC; HUANG, GW; TSENG, HC; LIN, HC; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-十月-1993EVIDENCE OF ZERO POTENTIAL SPIKE ENERGY IN ALGAAS GAAS HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORSCHEN, HR; LEE, CP; CHANG, CY; TSAI, KL; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-九月-1994FABRICATION OF P-CHANNEL POLYCRYSTALLINE SI1-XGEX THIN-FILM TRANSISTORS BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONLIN, HC; JUNG, TG; LIN, HY; CHANG, CY; CHEN, LP; 電控工程研究所; Institute of Electrical and Control Engineering
1-一月-1973FABRICATION OF ZN-SI SCHOTTKY-BARRIER DIODE BY CONTROLLING SUBSTRATE TEMPERATURE DURING EVAPORATIONCHANG, CY; CHIU, PL; MA, CH; 工學院; College of Engineering
1-一月-1993FIELD INVERSION GENERATED IN THE CMOS DOUBLE-METAL PROCESS DUE TO PETEOS AND SOG INTERACTIONSHSU, SL; LIU, LM; FANG, CH; YING, SL; CHEN, TL; LIN, MS; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1995FORMATION AND CHARACTERIZATION OF GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE-TEMPERATURECHENG, TM; CHANG, CY; HUANG, JH; 電控工程研究所; Institute of Electrical and Control Engineering
1-三月-1994GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURESYARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-九月-1989GEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTORYARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-七月-1992GRADED-GAP A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODESHONG, JW; SHIN, NF; JEN, TS; NING, SL; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
6-九月-1993GROWTH OF UNDOPED POLYCRYSTALLINE SI BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEMLIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; CHAO, CY; 機械工程學系; 電控工程研究所; Department of Mechanical Engineering; Institute of Electrical and Control Engineering
1-八月-1994HETEROJUNCTION BIPOLAR-TRANSISTORS WITH EMITTER BARRIER LOWERED BY DELTA-DOPINGCHEN, HR; HUANG, CH; CHANG, CY; LEE, CP; TSAI, KL; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1995HIGH CARRIER DENSITY AND MOBILITY IN GAAS/INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURESKAO, MJ; HSU, WC; SHIEH, HM; LIU, WC; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-八月-1994HIGH-LEVEL INJECTION INFLUENCE ON THE HIGH-FREQUENCY PERFORMANCE OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORSCHYAN, YF; SZE, SM; CHANG, CY; CHIUEH, HM; REIF, R; 電子物理學系; Department of Electrophysics
27-六月-1994HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXYCHENG, TM; CHANG, CY; CHANG, TC; HUANG, JH; HUANG, MF; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-十一月-1988HIGH-TEMPERATURE BEHAVIOR OF PD-N-GAAS CONTACTSNEE, CY; CHANG, CY; CHENG, TF; HUANG, TS; 電控工程研究所; Institute of Electrical and Control Engineering
1-十月-1989A HYDROGENATED AMORPHOUS SI/SIC HETEROJUNCTION PHOTOTRANSISTORHONG, JW; CHEN, YW; CHANG, KC; FANG, YK; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-二月-1991HYDROGENATED AMORPHOUS SI/SIC SUPERLATTICE PHOTOTRANSISTORSWU, MT; FANG, YK; HONG, JW; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
15-四月-1993HYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTUREJEN, TS; CHEN, JY; SHIN, NF; HONG, JW; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
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