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顯示 1942 到 1961 筆資料，總共 7639 筆 < 上一頁   下一頁 >
公開日期標題作者
25-十二月-2010The effect of plasma deposition on the electrical characteristics of Pt/HfOx/TiN RRAM deviceLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Wu, Chi-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2007Effect of plasma treatment on the microstructure and electrical properties of MIM capacitors with PECVD silicon oxide and silicon nitrideHo, Chia-Cheng; Chiou, Bi-Shiou; 電子工程學系及電子研究所; Innovative Packaging Research Center; Department of Electronics Engineering and Institute of Electronics; Innovative Packaging Research Center
1981EFFECT OF POLY-SI GETTERING SCHEME ON THE QUALITY OF SI EPITAXIAL FILMCHEN, MC; LEE, JY; WU, HJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001The effect of polyimide passivation on the electromigration of Cu multilayer interconnectionsJiang, JS; Chiou, BS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997Effect of processing temperature on polysilicon thin-film transistors with liquid-phase deposited oxide as gate insulatorYeh, CF; Chen, TJ; Jeng, JN; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-十二月-2010The effect of pulsed laser annealing on the nickel silicide formationChen, Hou-Yu; Lin, Chia-Yi; Huang, Chien-Chao; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2000Effect of rapid thermal annealed TiN barrier layer on BST capacitors prepared by RF magnetron cosputter system at low substrate temperaturesHwang, CC; Jaing, CC; Lai, MJ; Chen, JS; Huang, S; Juang, MH; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2001Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperatureHwang, CC; Juang, MH; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1998Effect of reactive ion etching and post-etching annealing on the electrical characteristics of indium-tin oxide silicon junctionsChiou, BS; Wu, KL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1987THE EFFECT OF SCATTERING MECHANISMS ON TRANSVERSE MAGNETORESISTANCE IN PIEZOELECTRIC SEMICONDUCTORSWU, CC; LIN, CJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2002Effect of shape and size on electron transition energies of InAs semiconductor quantum dotsLi, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
9-一月-1995EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-CLIU, CC; LEE, CY; CHENG, KL; CHENG, HC; YEW, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012The Effect of Silicon Oxide Based RRAM with Tin DopingChang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2010Effect of SiO2 Additive As Inhibitor on Crystalline Structure and H2S Sensing Performance of CuO-Au-SnO2 Thin Film Prepared by Liquid Phase DepositionChiou, Jin-Chern; Tsai, Shang-Wei; Chiou, Jin-Chern; Huang, Cheng-Tang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2008Effect of size and plasma treatment and the application of Weibull distribution on the breakdown of PECVD SiNx MIM capacitorsHo, Chia-Cheng; Chiou, Bi-Shiou; 電子工程學系及電子研究所; Innovative Packaging Research Center; Department of Electronics Engineering and Institute of Electronics; Innovative Packaging Research Center
11-五月-2012Effect of size and shape dispersion on the averaged magnetic response of ensembles of semiconductor quantum ringsThu, L. M.; Chiu, W. T.; Voskoboynikov, O.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
21-八月-2004Effect of Sn dopant on the properties of ZnO nanowiresLi, SY; Lin, P; Lee, CY; Tseng, TY; Huang, CJ; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-1994EFFECT OF SOAKING TIME ON THE TEMPERATURE-COEFFICIENT OF RESISTIVITY OF SEMICONDUCTING BARIUM-TITANATE PTCR CERAMICSLU, YY; LAI, CH; TSENG, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2014Effect of spatial hole burning on a dual-wavelength mode-locked laser based on compactly combined dual gain mediaHuang, Y. J.; Tzeng, Y. S.; Cho, H. H.; Chen, Y. F.; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
顯示 1942 到 1961 筆資料，總共 7639 筆 < 上一頁   下一頁 >