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Issue DateTitleAuthor(s)
1-Apr-1998Back-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET'sChen, MJ; Huang, HT; Hou, CS; Yang, KN; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2001Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETsYang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETsYang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2001Edge hole direct Tunneling leakage in ultrathin gate oxide p-channel MOSFETsYang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SSM; Yu, DCH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2000Forward gated-diode measurement of filled traps in high-field stressed thin oxidesChen, MJ; Kang, TK; Huang, HT; Liu, CH; Chang, YJ; Fu, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2000Monte Carlo sphere model for effective oxide thinning induced extrinsic breakdownHuang, HT; Chen, MJ; Chen, JH; Su, CW; Hou, CS; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2000A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxidesYang, KN; Huang, HT; Chang, MC; Chu, CM; Chen, YS; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2004Separation of channel backscattering coefficients in nanoscale MOSFETsChen, MJ; Huang, HT; Chou, YC; Chen, RT; Tseng, YT; Chen, PN; Diaz, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Temperature dependent channel backscattering coefficients in nanoscale MOSFETsChen, MJ; Huang, HT; Huang, KC; Chen, PN; Chang, CS; Diaz, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2001A trap generation closed-form statistical model for intrinsic oxide breakdownHuang, HT; Chen, MJ; Su, CW; Chen, JH; Hou, CS; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 10 of 10