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Showing results 1 to 16 of 16
Issue DateTitleAuthor(s)
1-Feb-2003Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistorsLin, HC; Wang, MF; Lu, CY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2002Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistorLin, HC; Wang, MF; Hou, FJ; Liu, JT; Huang, TY; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2000Characteristics of polysilicon oxides combining N2O nitridation and CMP processesLei, TF; Chen, JH; Wang, MF; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Effects of base oxide in HfSiO/SiO2 high-k gate stacksWu, WH; Chen, MC; Wang, MF; Hou, TH; Yao, LG; Jin, Y; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
19-Feb-1998Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETsJong, FC; Huang, TY; Chao, TS; Lin, HC; Wang, MF; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Jan-1999The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistorsWang, MF; Chien, CH; Chao, TS; Lin, HC; Jong, FC; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2002Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damageLee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1999Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP processLei, TF; Chen, JH; Wang, MF; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1998Evaluation of plasma charging damage in ultrathin gate oxidesLin, HC; Chen, CC; Chien, CH; Hsein, SK; Wang, MF; Chao, TS; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2003High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctionsLin, HC; Wang, MF; Hou, FJ; Lin, HN; Lu, CY; Liu, JT; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2002Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gateWang, MF; Huang, TY; Kao, YC; Lin, HC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997A model for photoresist-induced charging damage in ultra-thin gate oxidesLin, HC; Chien, CH; Wang, MF; Huang, TY; Chang, CY; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
1-Mar-1999Oxide thickness dependence of plasma charging damageLin, HC; Chen, CC; Wang, MF; Hsien, SK; Chien, CH; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2002A physical model for the hysteresis phenomenon of the ultrathin ZrO2 filmWang, JC; Chiao, SH; Lee, CL; Lei, TF; Lin, YM; Wang, MF; Chen, SC; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2002Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma techniqueHung, CC; Lin, HC; Wang, MF; Huang, TY; Shih, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001Thermal stability of PVD TiN gate and its impacts on characteristics of CMOS transistorsWang, MF; Kao, YC; Huang, TY; Lin, HC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 16 of 16