| 公開日期 | 標題 | 作者 |
| 2000 | CF4電漿前置處理在超大型積體電路上的相關應用 | 曾泓棋; Tzeng Hung Chi; 李崇仁; Lee Chung Len; 電子研究所 |
| 1-八月-1997 | Effects of floating-gate doping concentration on flash cell performance | Huang, TY; Jong, FC; Lin, HC; Chao, TS; Leu, LY; Young, K; Lin, CH; Chiu, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-五月-1994 | NEW POLYSILICON-OXIDE-NITRIDE-OXIDE-SILICON ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY DEVICE APPROACH FOR ELIMINATING OFF-CELL LEAKAGE CURRENT | LIN, JK; CHANG, CY; HUANG, HS; CHEN, KL; KUO, DC; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-十月-2005 | New triple self-aligned (SA3) split-gate flash cell with T-shaped source coupling | Sung, HC; Lei, TF; Huang, CM; Kao, YC; Lin, YT; Wang, CS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-四月-2005 | A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications | Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Chen, MS; Liao, YY; Ting, WC; Ku, YHJ; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十月-2005 | Novel single-poly EEPROM with damascene control-gate structure | Sung, HC; Lei, TF; Hsu, TH; Wang, SW; Kao, YC; Lin, YT; Wang, CS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-1997 | A study on the radiation hardness of flash cell with horn-shaped floating-gate | Huang, TY; Jong, FC; Chao, TS; Lin, HC; Leu, LY; Young, K; Lin, CH; Chiu, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-1997 | A study on the radiation hardness of flash cell with horn-shaped floating-gate | Huang, TY; Jong, FC; Chao, TS; Lin, HC; Leu, LY; Young, K; Lin, CH; Chiu, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-2004 | Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell | Liu, MY; Chang, YW; Zous, NK; Yang, I; Lu, TC; Wang, TH; Ting, WC; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2001 | 一種新式氮化矽快閃式記憶元件研究(I) | 汪大暉; WANG TAHUI; 國立交通大學電子工程學系 |
| 1999 | 一種用於低功率及高效率快閃式記憶體之新型寫入方式 | 莊子慶; Tze-Chihng Chuang; 莊紹勳; S. S. Chung; 電子研究所 |
| 1999 | 不同浮動閘極材料N通道快閃記憶體資料保存特性研究 | 吳柏璋; Bo-chang Wu; 莊紹勳; Steve S. Chung; 電子研究所 |
| 2007 | 分離式閘極非揮發性記憶體技術及新穎多晶矽電子抹除式唯讀記憶體之研究 | 宋弘政; Hung-Cheng Sung; 雷添 福; Tien-Fu Lei; 電子研究所 |
| 1989 | 操作在次臨界的浮閘極EEPROM作為可程式神經鍵的元件 | 高承永; GAO,CHENG-YONG; 陳明哲; CHENG,MING-ZHE; 電子研究所 |
| 2004 | 氮化矽快閃記憶體可靠性量測與分析 | 馬煥淇; Ma, Huan-chi; 汪大暉; Tahui Wang; 電子研究所 |
| 1993 | 電子可擦式記憶元件及電路之可靠度研究與改進 | 吳重雨; 交通大學電子工程研究所(NCTEELN) |
| 1995 | 電子可擦拭可儲存唯讀記憶體直流及高頻儲存/擦拭之暫態 | 林雅芬; Lin, Yai-Fen; 吳重雨; Chung-Yu Wu; 電子研究所 |
