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公開日期標題作者
1-十一月-2019Analysis and design of wideband active power splitter with interleaf transmission line topologyHuang, Ching-Ying; Hu, Robert; Niu, Dow-Chi; Chang, Chi-Yang; 電機學院; College of Electrical and Computer Engineering
15-五月-2009Analysis of GaAs/GaSb/GaAs structures under optical excitation considering surface states as an electron reservoirHsieh, Hong-Wen; Yen, Shun-Tung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
十二月-2014Analysis of two-phonon infrared spectral features of gallium arsenide and indium phosphide by first-principles calculationsLin, Huang-Hsiang; Chung, Pei-Kang; Yen, Shun-Tung; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
1-二月-2009Characteristics of In(Ga)As quantum ring infrared photodetectorsLing, H. S.; Wang, S. Y.; Lee, C. P.; Lo, M. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-六月-2003Dependence of energy gap on magnetic field in semiconductor nano-scale quantum ringsLi, YM; Lu, HM; Voskoboynikov, O; Lee, CP; Sze, SM; 交大名義發表; National Chiao Tung University
2-二月-2009Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dotsLiao, Yu-An; Hsu, Wei-Ting; Chiu, Pei-Chin; Chyi, Jen-Inn; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
15-十一月-2008Electric-field-controlled electron relaxation in lateral double quantum dots embedded in a suspended slabLiao, Y. Y.; Chuu, D. S.; Jian, S. R.; 電子物理學系; Department of Electrophysics
1-八月-2009Impacts of structural asymmetry on the magnetic response of excitons and biexcitons in single self-assembled In(Ga)As quantum ringsLin, Ta-Chun; Lin, Chia-Hsien; Ling, Hong-Shi; Fu, Ying-Jhe; Chang, Wen-Hao; Lin, Sheng-Di; Lee, Chien-Ping; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-九月-2009The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectorsLin, Wei-Hsun; Chao, Kuang-Ping; Tseng, Chi-Che; Mai, Shu-Cheng; Lin, Shih-Yen; Wu, Meng-Chyi; 光電工程學系; Department of Photonics
15-三月-2009Influence of thermal annealing on the electron emission of InAs quantum dots containing a misfit defect stateChen, J. F.; Yang, C. H.; Hsu, R. M.; Wang, U. S.; 電子物理學系; Department of Electrophysics
26-七月-2010The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitorTrinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.; 材料科學與工程學系; Department of Materials Science and Engineering
2016N-GaAs/PEDOT:PSS 混和式太陽能電池中的接面形成與傳輸機制張凱富; 孫建文; Chang, Kai-Fu; Sun, Kien-Wen; 應用化學系碩博士班
24-五月-2010Optical sensing of square lattice photonic crystal point-shifted nanocavity for protein adsorption detectionLu, Tsan-Wen; Lin, Pin-Tso; Sio, Kuan-Un; Lee, Po-Tsung; 光電工程學系; Department of Photonics
20-四月-2009Origins of nonzero multiple photon emission probability from single quantum dots embedded in photonic crystal nanocavitiesChang, Hsiang-Szu; Chen, Wen-Yen; Hsu, Tzu-Min; Hsieh, Tung-Po; Chyi, Jen-Inn; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
22-三月-2010Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diodeLin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen, Shu-Han; Chyi, Jen-Inn; 光電工程學系; Department of Photonics
1-十二月-2008Single-exciton energy shell structure in InAs/GaAs quantum dotsAwirothananon, S.; Raymond, S.; Studenikin, S.; Vachon, M.; Render, W.; Sachrajda, A.; Wu, X.; Babinski, A.; Potemski, M.; Fafard, S.; Cheng, S. J.; Korkusinski, M.; Hawrylak, P.; 電子物理學系; Department of Electrophysics
4-五月-2009Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ringLin, C. H.; Lin, H. S.; Huang, C. C.; Su, S. K.; Lin, S. D.; Sun, K. W.; Lee, C. P.; Liu, Y. K.; Yang, M. D.; Shen, J. L.; 應用化學系; 電子工程學系及電子研究所; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics
1-五月-2010Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coveragesTseng, Chi-Che; Chung, Tung-Hsun; Mai, Shu-Cheng; Chao, Kuang-Ping; Lin, Wei-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi; 光電工程學系; Department of Photonics
1-十一月-2008The transition mechanisms of a ten-period InAs/GaAs quantum-dot infrared photodetectorTseng, Chi-Che; Chou, Shu-Ting; Lin, Shin-Yen; Chen, Cheng-Nan; Lin, Wei-Hsun; Chen, Yi-Hao; Chung, Tung-Hsun; Wu, Meng-Chyi; 光電工程學系; Department of Photonics
20-九月-2004Vertical coupling effects and transition energies in multilayer InAs/GaAs quantum dotsLi, YM; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
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