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顯示 1 到 16 筆資料，總共 16 筆
公開日期標題作者
1-一月-2018Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memoryLu, C. C.; Cheng, C. C.; Chiu, H. P.; Lin, W. L.; Chen, T. W.; Ku, S. H.; Tsai, Wen-Jer; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006<bold>Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory</bold>Gu, S. H.; Li, C. W.; Wang, Tahui; Lu, W. P.; Chen, K. C.; Ku, Joseph; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Cell Endurance Prediction from a Large-area SONOS CapacitorLee, C. H.; Tu, W. H.; Gu, S. H.; Wu, C. W.; Lin, S. W.; Yeh, T. H.; Chen, K. F.; Chen, Y. J.; Hsieh, J. Y.; Huang, I. J.; Zous, N. K.; Han, T. T.; Chen, M. S.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, C. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Characterization and Monte Carlo analysis of secondary electrons induced program disturb in a buried diffusion bit-line SONOS flash memoryTang, Chun-Jung; Li, C. W.; Wang, Tahui; Gu, S. H.; Chen, P. C.; Chang, Y. W.; Lu, T. C.; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Chip-Level Characterization and RTN-Induced Error Mitigation beyond 20nm Floating Gate Flash MemoryLin, T. W.; Ku, S. H.; Cheng, C. H.; Lee, C. W.; Ijen-Huang; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash MemoryKu, S. H.; Lin, T. W.; Cheng, C. H.; Lee, C. W.; Chen, Ti-Wen; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009In-situ TEM Study of Electromigration in Cu linesLiao, C. N.; Chen, K. C.; Wu, W. W.; Chen, L. J.; Tu, K. N.; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2018Investigation of Data Pattern Effects on Nitride Charge Lateral Migration in a Charge Trap Flash Memory by Using a Random Telegraph Signal MethodLiu, Y. H.; Lin, H. Y.; Jiang, C. M.; Wang, Tahui; Tsai, W. J.; Lu, T. C.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Overall Operation Considerations for a SONOS-based MemoryLee, C. H.; Tu, W. H.; Chong, L. H.; Gu, S. H.; Chen, K. F.; Chen, Y. J.; Hsieh, J. Y.; Huang, I. J.; Zous, N. K.; Han, T. T.; Chen, M. S.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, C. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
八月-2016Poly-Silicon Trap Position and Pass Voltage Effects on RTN Amplitude in a Vertical NAND Flash Cell StringChou, Y. L.; Wang, Tahui; Lin, Mercator; Chang, Y. W.; Liu, Lenvis; Huang, S. W.; Tsai, W. J.; Lu, T. C.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2016Polycrystalline-Silicon Channel Trap Induced Transient Read Instability in a 3D NAND Flash Cell StringTsai, Wen-Jer; Lin, W. L.; Cheng, C. C.; Ku, S. H.; Chou, Y. L.; Liu, Lenvis; Hwang, S. W.; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Program Charge Effect on Random Telegraph Noise Amplitude and Its Device Structural Dependence in SONOS Flash MemoryChiu, J. P.; Chou, Y. L.; Ma, H. C.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2009Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory CellMa, H. C.; Chou, Y. L.; Chiu, J. P.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Use of Random Telegraph Signal as Internal Probe to Study Program/Erase Charge Lateral Spread in a SONOS Flash MemoryChou, Y. L.; Chiu, J. P.; Ma, H. C.; Wang, Tahui; Chao, Y. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2011Variations of V(t) Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation EffectChou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2011Variations of V-t Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation EffectChou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 16 筆資料，總共 16 筆