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公開日期標題作者
2012Advanced Metal-Gate/High-kappa CMOS with Small EOT and Better High Field MobilityChin, Albert; Chen, W. B.; Chen, P. C.; Wu, Y. H.; Chi, C. C.; Lee, Y. J.; Chang-Liao, K. S.; Kuan, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2011Bipolar switching characteristics of low-power Geo resistive memoryCheng, C. H.; Chen, P. C.; Liu, S. L.; Wu, T. L.; Hsu, H. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2017Channel Modification Engineering by Plasma Processing in Tin-Oxide Thin Film Transistor: Experimental Results and First-Principles CalculationChiu, Y. C.; Chen, P. C.; Chang, S. L.; Zheng, Z. W.; Cheng, C. H.; Liou, G. L.; Kao, H. L.; Wu, Y. H.; Chang, C. Y.; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2010Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Location-Controlled Hydrothermal MethodYang, P. Y.; Wang, J. L.; Tsai, W. C.; Wang, S. J.; Chen, P. C.; Su, N. C.; Lin, J. C.; Lee, I. C.; Chang, C. T.; Wei, Y. C.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Characterization and Monte Carlo analysis of secondary electrons induced program disturb in a buried diffusion bit-line SONOS flash memoryTang, Chun-Jung; Li, C. W.; Wang, Tahui; Gu, S. H.; Chen, P. C.; Chang, Y. W.; Lu, T. C.; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2017Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illuminationChiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2011High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thicknessChen, W. B.; Cheng, C. H.; Lin, C. W.; Chen, P. C.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2010Higher-kappa titanium dioxide incorporating LaAlO(3) as dielectrics for MIM capacitorsCheng, C. H.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2010Higher-kappa titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitorsCheng, C. H.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2012Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxideCheng, C. H.; Chen, P. C.; Wu, Y. H.; Wu, M. J.; Yeh, F. S.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2010Lanthanide-Oxides Mixed TiO(2) Dielectrics for High-kappa MIM CapacitorsCheng, C. H.; Deng, C. K.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2010Lanthanide-Oxides Mixed TiO2 Dielectrics for High-kappa MIM CapacitorsCheng, C. H.; Deng, C. K.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2011Long-Endurance Nanocrystal TiO(2) Resistive Memory Using a TaON Buffer LayerCheng, C. H.; Chen, P. C.; Wu, Y. H.; Yeh, F. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2011Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer LayerCheng, C. H.; Chen, P. C.; Wu, Y. H.; Yeh, F. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2015The Role of Oxygen Vacancies on Switching Characteristics of TiOx Resistive MemoriesZheng, Z. W.; Hsu, H. H.; Chen, P. C.; Cheng, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2010A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO(3) rf CapacitorCheng, C. H.; Huang, C. C.; Hsu, H. H.; Chen, P. C.; Chiang, K. C.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2010A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO3 rf CapacitorCheng, C. H.; Huang, C. C.; Hsu, H. H.; Chen, P. C.; Chiang, K. C.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics