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公開日期標題作者
8-一月-1996A bilayer Ti/Ag ohmic contact for highly doped n-type GaN filmsGuo, JD; Lin, CI; Feng, MS; Pan, FM; Chi, GC; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
18-十二月-1997Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layersLin, CF; Cheng, HC; Feng, MS; Chi, GC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-2001Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor depositionWen, TC; Lee, WI; Sheu, JK; Chi, GC; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
24-六月-1996The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layerLin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-1997Growth and characterizations of GaN on SiC substrates with buffer layersLin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-九月-1997Growth and characterizations of GaN on SiC substrates with buffer layersLin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
3-四月-2000Improved contact performance of GaN film using Si diffusionLin, CF; Cheng, HC; Chi, GC; Bu, CJ; Feng, MS; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
27-十月-2003Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiN(x) interlayer in n-GaN layersTu, RC; Chuo, CC; Pan, SM; Fan, YM; Tsai, CE; Wang, TC; Tun, CJ; Chi, GC; Lee, BC; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
27-十月-2003Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layersTu, RC; Chuo, CC; Pan, SM; Fan, YM; Tsai, CE; Wang, TC; Tun, CJ; Chi, GC; Lee, BC; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
12-五月-1997Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructuresLin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
12-五月-1997Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructuresLin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-四月-2002Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etchingWen, TC; Lee, WI; Sheu, JK; Chi, GC; 電子物理學系; 資訊工程學系; Department of Electrophysics; Department of Computer Science
1-十二月-2000Properties of Mg activation in thermally treated GaN : Mg filmsLin, CF; Cheng, HC; Chang, CC; Chi, GC; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-三月-2003Thermal annealing effects on the optical gain of InGaN/GaN quantum well structuresChen, CC; Hsueh, TH; Ting, YS; Chi, GC; Chang, CA; Wang, SC; 光電工程學系; Department of Photonics
15-二月-2004Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor depositionTu, RC; Tun, CJ; Chuo, CC; Lee, BC; Tsai, CE; Wang, TC; Chi, J; Lee, CP; Chi, GC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2000W ohmic contact for highly doped n-type GaN filmsLin, CF; Cheng, HC; Chi, GC; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
10-六月-1996X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layersLee, CH; Chi, GC; Lin, CF; Feng, MS; Guo, JD; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 17 筆資料，總共 17 筆