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公開日期標題作者
1999An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET'sChung, SS; Chen, SJ; Yih, CM; Yang, WJ; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004An accurate RF CMOS gate resistance model compatible with HSPICELin, HW; Chung, SS; Wong, SC; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2001Characterization of hot-hole injection induced SILC and related disturbs in flash memoriesYih, CM; Ho, ZH; Liang, MS; Chung, SS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Different approaches for reliability enhancement of p-channel flash memoryChung, SS; Chen, YJ; Tsai, AW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1995Direct observation of the lateral nonuniform channel doping profile in submicron MOSFET's from an anomalous charge pumping measurement resultsChung, SS; Cheng, SM; Lee, GH; Guo, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1996An efficient method for characterizing time-evolutional interface state and its correlation with the device degradation in LDD n-MOSFET'sLee, RGH; Wu, JP; Chung, SS; 電子工程學系及電子研究所; 電控工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Electrical and Control Engineering
2004The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technologyChung, SS; Yeh, CH; Feng, SJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2006Impact of STI on the reliability of narrow-width pMOSFETs with advanced ALD N/O gate stackChung, SS; Yeh, CH; Feng, HJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003An improved interface characterization technique for a full-range profiling of oxide damage in ultra-thin gate oxide CMOS devicesChen, SJ; Lin, TC; Lo, DK; Yang, JJ; Chung, SS; Kao, TY; Shiue, RY; Wang, CJ; Peng, YK; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Localization of NBTI-induced oxide damage in direct tunneling regime gate oxide pMOSFET using a novel low gate-leakage gated-diode (L-2-GD) methodChung, SS; Lo, DK; Yang, JJ; Lin, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Low leakage reliability characterization methodology for advanced CMOS with gate oxide in the 1nm rangeChung, SS; Feng, HJ; Hsieh, YS; Liu, A; Lin, WM; Chen, DF; Ho, JH; Huang, KT; Yang, CK; Cheng, O; Sheng, YC; Wu, DY; Shiau, WT; Chien, SC; Liao, K; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001N-channel versus P-channel flash EEPROM - Which one has better reliabilitiesChung, SS; Liaw, ST; Yih, CM; Ho, ZH; Lin, CJ; Kuo, DS; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1999A new approach for characterizing structure-dependent hot-carrier effects in drain-engineered MOSFET'sChung, SS; Yang, JJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1998A new approach to simulating n-MOSFET gate current degradation by including hot-electron induced oxide damageYih, CM; Cheng, SM; Chung, SS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1998A new approach to simulating n-MOSFET gate current degradation by including hot-electron induced oxide damageYih, CM; Cheng, SM; Chung, SS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997A new bride damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cyclesChung, SS; Yih, CM; Cheng, SM; Liang, MS; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-一月-2001New degradation mechanisms of width-dependent hot carrier effect in quarter-micron shallow-trench-isolated p-channel metal-oxide-semiconductor field-effect-transistorsChung, SS; Chen, SJ; Yang, WJ; Yih, CM; Yang, JJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devicesChen, SJ; Lin, CC; Chung, SS; Lin, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1998New insight into the degradation mechanism of nitride spacer with different post-oxide in submicron LDD n-MOSFET'sYih, CM; Wang, CL; Chung, SS; Wu, CC; Tan, W; Wu, HJ; Pi, S; Huang, D; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005A new insight into the degradation mechanisms of various mobility-enhanced CMOS devices with different substrate engineeringChung, SS; Liu, YR; Wu, SJ; Lai, CS; Liu, YC; Chen, DF; Lin, HS; Shiau, WT; Tsai, CT; Chien, SC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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