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公開日期標題作者
15-五月-1994ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAASCHEN, HD; FENG, MS; LIN, KC; CHEN, PA; WU, CC; WU, JW; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
15-十一月-1995BANDGAP SHRINKAGE OF DEGENERATE P-TYPE GAAS BY PHOTOLUMINESCENCE SPECTROSCOPYFENG, MS; FANG, CSA; CHEN, HD; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-六月-1993CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONCHEN, HD; CHANG, CY; LIN, KC; CHAN, SH; FENG, MS; CHEN, PA; WU, CC; JUANG, FY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
15-九月-1994CATHODOLUMINESCENT CHARACTERISTICS OF ZNGA2O4 PHOSPHOR GROWN BY RADIO-FREQUENCY MAGNETRON SPUTTERINGHSIEH, IJ; CHU, KT; YU, CF; FENG, MS; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-八月-1993CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH THIN OXIDE NITRIDE GATE STRUCTURESCHENG, HC; TAI, YH; FENG, MS; WANG, JJ; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-六月-1995CHARACTERIZATION OF H-2/N-2 PLASMA PASSIVATION PROCESS FOR POLY-SI THIN-FILM TRANSISTORS (TFTS)TSAI, MJ; WANG, FS; CHENG, KL; WANG, SY; FENG, MS; CHENG, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
20-六月-1993DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITIONWU, CC; LIN, KC; CHAN, SH; FENG, MS; CHANG, CY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
18-九月-1995EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXYLEE, WI; HUANG, TC; GUO, JD; FENG, MS; 材料科學與工程學系; 電子物理學系; 電子與資訊研究中心; Department of Materials Science and Engineering; Department of Electrophysics; Microelectronics and Information Systems Research Center
18-九月-1995EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXYLEE, WI; HUANG, TC; GUO, JD; FENG, MS; 材料科學與工程學系; 電子物理學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electrophysics; D Link NCTU Joint Res Ctr
1-五月-1992EFFECTS OF POLYSILICON GATE ON CHARACTERISTICS OF ONO CAPACITORSFENG, MS; LIANG, KC; CHANG, CY; LIN, LY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-五月-1995EFFECTS OF PRESSURE ON THE FORMATION OF PHOSPHORUS-DOPED MICROCRYSTALLINE SILICON FILMS DEPOSITED BY RADIO-FREQUENCY GLOW-DISCHARGEFENG, MS; LIANG, CW; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-六月-1994GROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERINGHSIEH, IJ; FENG, MS; KUO, KT; LIN, P; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-1993IN0.49GA0.51P/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONFENG, MS; LIN, KC; WU, CC; CHEN, HD; SHANG, YC; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
15-二月-1994LOW-TEMPERATURE LUMINESCENT PROPERTIES OF DEGENERATE P-TYPE GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONCHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, CC; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-一月-1995A NEW FABRICATION TECHNOLOGY FOR FIELD-EMISSION TRIODES WITH EMITTER-GATE SEPARATION OF 0.18-MU-MWANG, CC; LEE, WF; KU, TK; CHEN, MS; FENG, MS; HSIEH, IJ; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1994A NEW PORTRAYAL OF OXIDATION OF UNDOPED POLYCRYSTALLINE SILICON FILMS IN A SHORT-DURATIONWANG, PW; SU, HP; TSAI, MJ; HONG, G; FENG, MS; CHENG, HC; 奈米中心; Nano Facility Center
1-四月-1994PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCESCHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, JW; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-十二月-1991RADIATIVE RECOMBINATION MECHANISMS OF GAAS1-XPXFENG, MS; HSIAO, HL; 材料科學與工程學系; Department of Materials Science and Engineering
1-十月-1995RAMAN-SCATTERING OF SE-DOPED GALLIUM NITRIDE FILMSKUO, HR; FENG, MS; GUO, JD; LEE, MC; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-十月-1995SE-DOPED GAN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONGUO, JD; FENG, MS; PAN, FM; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
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