1. You are Here：

Browsing by Author Hsu, H. T.

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)
1-Jan-2010An Al(2)O(3) AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication ApplicationsWu, Yun-Chi; Lin, Yueh-Chin; Chang, Edward Yi; Lee, C. T.; Kei, Chi-Chung; Chang, Chia-Ta; Hsu, H. T.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2010An Al2O3 AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication ApplicationsWu, Yun-Chi; Lin, Yueh-Chin; Chang, Edward Yi; Lee, C. T.; Kei, Chi-Chung; Chang, Chia-Ta; Hsu, H. T.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Feb-2007Effect of gate sinking on the device performance, of the InGaP/AlGaAs/InGaAs enhancement-mode PHEMTChu, L. H.; Chang, E. Y.; Chang, L.; Wu, Y. H.; Chen, S. H.; Hsu, H. T.; Lee, T. L.; Lien, Y. C.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2016Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate InsulatorLin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Huang, Y. X.; Liu, S. C.; Hsu, H. T.; Hsieh, T. E.; Kakushima, K.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
2016Evaluation of GaN HEMT with Field Plate for Reliability ImprovementLin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Chin, P. C.; Hsu, H. T.; Hsieh, T. E.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
2016Optimization of gate insulator material for GaN MIS-HEMTLin, Y. C.; Lin, T. W.; Wu, C. H.; Yao, J. N.; Hsu, H. T.; Shih, W. C.; Kakushima, K.; Tsutsui, K.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-Feb-2007SPDT GaAs switches with copper metallized interconnectsWu, Y. C.; Chang, E. Y.; Lin, Y. C.; Hsu, H. T.; Chen, S. H.; Wei, W. C.; Chu, L. H.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jan-2019Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise ApplicationWang, C.; Lin, Y. C.; Kuo, C. N.; Lee, M. W.; Yao, J. N.; Huang, T. J.; Hsu, H. T.; Chang, Edward Y.; 電子工程學系及電子研究所; 國際半導體學院; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-Jan-2019Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTsLin, Y. C.; Lee, M. W.; Tsai, M. Y.; Wang, C.; Yao, J. N.; Huang, T. J.; Hsu, H. T.; Maa, J. S.; Chang, Edward Y.; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
Showing results 1 to 9 of 9