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公開日期標題作者
201330 GHz 2-Stage MMIC Low Noise Amplifier using GaAs Pseudomorphic HEMTRasmi, Amiza; Azmi, I. M.; Rahim, A. I. A.; Hsu, Heng-Tung; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-二月-201030-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTsChang, Chia-Ta; Hsu, Heng-Tung; Chang, Edward Yi; Kuo, Chien-I; Huang, Jui-Chien; Lu, Chung-Yu; Miyamoto, Yasuyuki; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2009A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)Kuo, Chien-I; Hsu, Heng-Tung; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Chen, Yu-Lin; Biswas, Dhrubes; 材料科學與工程學系; Department of Materials Science and Engineering
二月-2016A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applicationsFatah, Faiz Aizad; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Hu, Chenming Calvin; Salahuddin, Sayeef; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2010An 80 nm In(0.7)Ga(0.3)As MHEMT with Flip-Chip Packaging for W-Band Low Noise ApplicationsWang, Chin-Te; Kuo, Chien-I; Lim, Wee-Chin; Hsu, Li-Han; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; Tsai, Szu-Ping; Chiu, Yu-Sheng; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2010An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise ApplicationsWang, Chin-Te; Kuo, Chien-, I; Lim, Wee-Chin; Hsu, Li-Han; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; Tsai, Szu-Ping; Chiu, Yu-Sheng; 材料科學與工程學系; Department of Materials Science and Engineering
2007Accurate Performance Evaluation of HEMT Devices for High-Speed Logic Applications through Rigorous Device Modelling TechniqueHsu, Heng-Tung; Chang, Chia-Yuan; Hsu, Heng-Shou; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
十一月-2016AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave ApplicationsLin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
一月-2017AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
一月-2017AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-十二月-2013Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board TechnologyWang, Chin-Te; Hsu, Heng-Tung; Chiang, Che-Yang; Chang, Edward Yi; Lim, Wee-Chin; 材料科學與工程學系; Department of Materials Science and Engineering
1-二月-2020Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation NetworksTsao, Yi-Fan; Wuerfl, Joachim; Hsu, Heng-Tung; 國際半導體學院; International College of Semiconductor Technology
1-十一月-2012Bias-Dependent Radio Frequency Performance for 40nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600GHzFatah, Faiz; Kuo, Chien-I; Hsu, Heng-Tung; Chiang, Che-Yang; Hsu, Ching-Yi; Miyamoto, Yasuyuki; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
7-六月-2019Communication-Potential of the pi-Gate InAs HEMTs for High-Speed and Low-Power Logic ApplicationsYao, Jing-Neng; Lin, Yueh-Chin; Wong, Ying-Chieh; Huang, Ting-Jui; Hsu, Heng-Tung; Sze, Simon M.; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2018A Compact Dual-band Antenna at Ka-band Frequencies for Next Generation Cellular ApplicationsHuang, Ting-Jui; Hsu, Heng-Tung; Chou, Hsi-Tseng; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
2010DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source-Drain Spacing TechnologyKuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Wu, Chien-Ying; Chen, Yu-Lin; Hsiao, Yu-Lin; 材料科學與工程學系; Department of Materials Science and Engineering
1-九月-2006Double delta-doped enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor for linearity applicationChu, Li-Hsin; Hsu, Heng-Tung; Chang, Edward-Yi; Lee, Tser-Lung; Chen, Sze-Hung; Lien, Yi-Chung; Chang, Chun-Yen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Effect of AlN Spacer on the AlGaN/GaN HEMT Device Performance at Millimeter-wave FrequenciesWang, Chun; Hsu, Heng-Tung; Huang, Ting-Jui; Fan, Jun-Kai; Chang, Edward Yi; 交大名義發表; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; National Chiao Tung University; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2012Effect of Field Plate on the RF Performance of AlGaN/GaN HEMT DevicesChiang, Che-Yang; Hsu, Heng-Tung; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-2012Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry EtchingKuo, Chien-I; Hsu, Heng-Tung; Hsu, Ching-Yi; Yu, Chia-Hui; Ho, Han-Chieh; Chang, Edward Yi; Chyi, Jen-Inn; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
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