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公開日期標題作者
五月-201632-nm Multigate Si-nTFET With Microwave-Annealed Abrupt JunctionHou, Fu-Ju; Sung, Po-Jung; Hsueh, Fu-Kuo; Wu, Chien-Ting; Lee, Yao-Jen; Chang, Mao-Nang; Li, Yiming; Hou, Tuo-Hung; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
20093D 65nm CMOS with 320 degrees C Microwave Dopant ActivationLee, Yao-Jen; Lu, Yu-Lun; Hsueh, Fu-Kuo; Huang, Kuo-Chin; Wan, Chia-Chen; Cheng, Tz-Yen; Han, Ming-Hung; Kowalski, Jeff M.; Kowalski, Jeff E.; Heh, Dawei; Chuang, Hsi-Ta; Li, Yiming; Chao, Tien-Sheng; Wu, Ching-Yi; Yang, Fu-Liang; 電子物理學系; 電子工程學系及電子研究所; 電信工程研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics; Institute of Communications Engineering
1-七月-2011Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave AnnealingHsueh, Fu-Kuo; Lee, Yao-Jen; Lin, Kun-Lin; Current, Michael I.; Wu, Ching-Yi; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
1-十月-2018Analog and RF Characteristics of Power FinFET Transistors With Different Drain-Extension DesignsChen, Bo-Yuan; Chen, Kun-Ming; Chiu, Chia-Sung; Huang, Guo-Wei; Chen, Hsiu-Chih; Chen, Chun-Chi; Hsueh, Fu-Kuo; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2014Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave AnnealWu, Chien-Ting; Lee, Yao-Jen; Hsueh, Fu-Kuo; Sung, Po-Jung; Cho, Ta-Chun; Current, Michael Ira; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
2007Comparisons on performance improvement by nitride capping layer among different channel directions nMOSFETsTsai, Tzu-, I; Lee, Yao-Jen; Chen, King-Sheng; Wang, Jeff; Hsueh, Fu-Kuo; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2019DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometriesChen, Bo-Yuan; Chen, Kun-Ming; Shiao, Yu-Shao Jerry; Lin, Chuang-Ju; Huang, Guo-Wei; Chen, Hsiu-Chih; Hsueh, Fu-Kuo; Shen, Chang-Hong; Shieh, Jia-Min; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2015Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch TechnologyLee, Yao-Jen; Hou, Fu-Ju; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Kao, Kuo-Hsing; Sung, Po-Jung; Yuan, Wei-You; Yao, Jay-Yi; Lu, Yu-Chi; Lin, Kun-Lin; Wu, Chien-Ting; Chen, Hisu-Chih; Chen, Bo-Yuan; Huang, Guo-Wei; Chen, Henry J. H.; Li, Jiun-Yun; Li, Yiming; Samukawa, Seiji; Chao, Tien-Sheng; Tseng, Tseung-Yuen; Wu, Wen-Fa; Hou, Tuo-Hung; Yeh, Wen-Kuan; 電子物理學系; 電機學院; 電子工程學系及電子研究所; Department of Electrophysics; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
1-二月-2011Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave AnnealingLee, Yao-Jen; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Lin, Ho-Ming; Wu, Shich-Chuang; Wu, Ching-Yi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2020Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS InverterSung, Po-Jung; Su, Chun-Jung; Lo, Shih-Hsuan; Hsueh, Fu-Kuo; Lu, Darsen D.; Lee, Yao-Jen; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
1-九月-2020Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET InvertersSung, Po-Jung; Chang, Shu-Wei; Kao, Kuo-Hsing; Wu, Chien-Ting; Su, Chun-Jung; Cho, Ta-Chun; Hsueh, Fu-Kuo; Lee, Wen-Hsi; Lee, Yao-Jen; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
1-一月-2016First Fully Functionalized Monolithic 3D(+) IoT Chip with 0.5 V Light-electricity Power Management, 6.8 GHz Wireless-communication VCO, and 4-layer Vertical ReRAMHsueh, Fu-Kuo; Shen, Chang-Hong; Shieh, Jia-Min; Li, Kai-Shin; Chen, Hsiu-Chih; Huang, Wen-Hsien; Wang, Hsing-Hsiang; Yang, Chih-Chao; Hsieh, Tung-Ying; Lin, Chang-Hsien; Chen, Bo-Yuan; Shiao, Yu-Shao; Huang, Guo-Wei; Wong, Oi-Ying; Chen, Po-Hung; Yeh, Wen-Kuan; 電子工程學系及電子研究所; 生醫電子轉譯研究中心; Department of Electronics Engineering and Institute of Electronics; Biomedical Electronics Translational Research Center
2015High Performance Poly Si Junctionless Transistors with Sub-5nm Conformally Doped Layers by Molecular Monolayer Doping and Microwave Incorporating CO2 Laser Annealing for 3D Stacked ICs ApplicationsLee, Yao-Jen; Cho, Ta-Chun; Sung, Po-Jung; Kao, Kuo-Hsing; Hsueh, Fu-Kuo; Hou, Fu-Ju; Chen, Po-Cheng; Chen, Hsiu-Chih; Wu, Chien-Ting; Hsu, Shu-Han; Chen, Yi-Ju; Huang, Yao-Ming; Hou, Yun-Fang; Huang, Wen-Hsien; Yang, Chih-Chao; Chen, Bo-Yuan; Lin, Kun-Lin; Chen, Min-Cheng; Shen, Chang-Hong; Huang, Guo-Wei; Huang, Kun-Ping; Current, Michael I.; Li, Yiming; Samukawa, Seiji; Wu, Wen-Fa; Shieh, Jia-Min; Chao, Tien-Sheng; Yeh, Wen-Kuan; 電子物理學系; 電機學院; Department of Electrophysics; College of Electrical and Computer Engineering
2011High Tensile Stress with Minimal Dopant Diffusion by Low Temperature Microwave AnnealLee, Yao-Jen; Lu, Yu-Lun; Mu, Zheng-Chang; Hsueh, Fu-Kuo; Chao, Tien-Sheng; Wu, Ching-Yi; 電子物理學系; Department of Electrophysics
1-五月-2017High-Performance Uniaxial Tensile Strained n-Channel JL SOI FETs and Triangular JL Bulk FinFETs for Nanoscaled ApplicationsSung, Po-Jung; Cho, Ta-Chun; Hou, Fu-Ju; Hsueh, Fu-Kuo; Chung, Sheng-Ti; Lee, Yao-Jen; Current, Michael I.; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
2007Impacts of a buffer layer and hi-wafers on the performance of strained-channel NMOSFETs with SiN capping layerTsai, Tzu-, I; Lee, Yao-Jen; Chen, King-Sheng; Wang, Jeff; Wan, Chia-Chen; Hsueh, Fu-Kuo; Lin, Horng-Chih; Chao, Tien-Sheng; Huang, Tiao-Yuan; 物理研究所; 電子工程學系及電子研究所; Institute of Physics; Department of Electronics Engineering and Institute of Electronics
1-十月-2008Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layerTsai, Tzu-I; Lin, Horng-Chih; Lee, Yao-Jen; Chen, King-Sheng; Wang, Jeff; Hsueh, Fu-Kuo; Chao, Tien-Sheng; Huang, Tiao-Yuan; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-十月-2013Low-Temperature Microwave Annealing for MOSFETs With High-k/Metal Gate StacksLee, Yao-Jen; Tsai, Bo-An; Lai, Chiung-Hui; Chen, Zheng-Yao; Hsueh, Fu-Kuo; Sung, Po-Jung; Current, Michael I.; Luo, Chih-Wei; 電子物理學系; Department of Electrophysics
2014Low-temperature Microwave Annealing Processes for Future IC FabricationLee, Yao-Len; Tsai, Bo-An; Cho, Ta-Chun; Hsueh, Fu-Kuo; Sung, Po-Jung; Lai, Chiung-Hui; Luo, Chih-Wei; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
1-三月-2014Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A ReviewLee, Yao-Jen; Cho, Ta-Chun; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Lu, Yu-Lun; Sung, Po-Jung; Chen, Hsiu-Chih; Current, Michael I.; Tseng, Tseung-Yuen; Chao, Tien-Sheng; Hu, Chenming; Yang, Fu-Liang; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
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