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顯示 1 到 16 筆資料，總共 16 筆
公開日期標題作者
1-八月-200410 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantationLai, FI; Hsueh, TH; Chang, YH; Kuo, HC; Wang, SC; Laih, LH; Song, CP; Yang, HP; 光電工程學系; Department of Photonics
1-四月-2005Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasksHsueh, TH; Huang, HW; Kao, CC; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-四月-2006Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfacesHuang, HW; Chu, JT; Kao, CC; Hsueh, TH; Lu, TC; Kuo, HC; Wang, SC; Yu, CC; Kuo, SY; 光電工程學系; Department of Photonics
1-六月-2005Enhancement in light output of InGaN-based microhole array light-emitting diodesHsueh, TH; Shen, JK; Huang, HW; Chu, JY; Kao, CC; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-十月-2005Fabrication and characterization of In(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorodsHsueh, TH; Sheu, JK; Huang, HW; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-十月-2005Fabrication and characterization of In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorodsHsueh, TH; Sheu, JK; Huang, HW; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC; 光電工程學系; 光電工程研究所; Department of Photonics; Institute of EO Enginerring
1-四月-2005Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorodsChang, YH; Hsueh, TH; Lai, FI; Chang, CW; Yu, CC; Huang, HW; Lin, CF; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
25-十月-2004Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etchingHuang, HW; Kao, CC; Hsueh, TH; Yu, CC; Lin, CF; Chu, JT; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
2004Fabrication of InGaN multi-quantum-well nanorod by Ni nano-maskHuang, HW; Hsueh, TH; Kao, CC; Chang, YH; Ou-Yang, M; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
15-八月-2002Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etchingYu, CC; Chu, CF; Tsai, JY; Huang, HW; Hsueh, TH; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics
16-十月-2003High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasersHsueh, TH; Kuo, HC; Lai, FI; Laih, LH; Wang, SC; 光電工程學系; Department of Photonics
10-七月-2003High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELsKuo, HC; Chang, YS; Lai, FY; Hsueh, TH; Laih, LH; Wang, SC; 光電工程學系; Department of Photonics
15-十一月-2004Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoatingLai, F; Chang, YH; Hsueh, TH; Huang, HW; Laih, LH; Kuo, HC; Wang, SC; Guung, TC; 光電工程學系; Department of Photonics
1-十月-2003Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disorderingLai, FI; Hsueh, TH; Chang, YH; Shu, WC; Lai, LH; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-四月-2005Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorodsHsueh, TH; Huang, HW; Lai, FI; Sheu, JK; Chang, YH; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-三月-2003Thermal annealing effects on the optical gain of InGaN/GaN quantum well structuresChen, CC; Hsueh, TH; Ting, YS; Chi, GC; Chang, CA; Wang, SC; 光電工程學系; Department of Photonics
顯示 1 到 16 筆資料，總共 16 筆