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公開日期標題作者
二月-2016A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applicationsFatah, Faiz Aizad; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Hu, Chenming Calvin; Salahuddin, Sayeef; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
8-一月-2016Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitorWu, Wen-Hao; Lin, Yueh-Chin; Hou, Tzu-Ching; Lin, Tai-Wei; Hsu, Hisang-Hua; Wong, Yuen-Yee; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 影像與生醫光電研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Imaging and Biomedical Photonics
1-二月-2012Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor CapacitorsTrinh, Hai-Dang; Lin, Yueh-Chin; Wang, Huan-Chung; Chang, Chia-Hua; Kakushima, Kuniyuki; Iwai, Hiroshi; Kawanago, Takamasa; Lin, Yan-Gu; Chen, Chi-Ming; Wong, Yuen-Yee; Huang, Guan-Ning; Hudait, Mantu; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-三月-2014Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor applicationWu, Wen-Hao; Lin, Yueh-Chin; Chuang, Ting-Wei; Chen, Yu-Chen; Hou, Tzu-Ching; Yao, Jing-Neng; Chang, Po-Chun; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十月-2013Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing TemperaturesLin, Yueh Chin; Trinh, Hai Dang; Chuang, Ting Wei; Iwai, Hiroshi; Kakushima, Kuniyuki; Ahmet, Parhat; Lin, Chun Hsiung; Diaz, Carlos H.; Chang, Hui Chen; Jang, Simon M.; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2017End of the Downsizing and World after ThatIwai, Hiroshi; 交大名義發表; National Chiao Tung University
2016End of the downsizing and world after thatIwai, Hiroshi; 交大名義發表; National Chiao Tung University
2016End of the scaling theory and Moore\'s lawIwai, Hiroshi; 交大名義發表; National Chiao Tung University
1-八月-2017Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power ApplicationLin, Yueh Chin; Huang, Yu Xiang; Huang, Gung Ning; Wu, Chia Hsun; Yao, Jing Neng; Chu, Chung Ming; Chang, Shane; Hsu, Chia Chieh; Lee, Jin Hwa; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子物理學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
五月-2016High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devicesChiu, Yu Sheng; Liao, Jen Ting; Lin, Yueh Chin; Liu, Shin Chien; Lin, Tai Ming; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi; 材料科學與工程學系; 影像與生醫光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics
1-四月-2016Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectricHsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 影像與生醫光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
四月-2016Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectricHsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 影像與生醫光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-七月-2017Reliability improvement in GaN HEMT power device using a field plate approachWu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-Shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung; 材料科學與工程學系; 光電系統研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; International College of Semiconductor Technology
1-二月-2020Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power ApplicationsHuang, Kuan Ning; Lin, Yueh-Chin; Lin, Jia-Ching; Hsu, Chia Chieh; Lee, Jin Hwa; Wu, Chia-Hsun; Yao, Jing Neng; Hsu, Heng-Tung; Nagarajan, Venkatesan; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chien, Chao Hsin; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
2011Study of La2O3/HfO2 Gate Dielectric for n-InAs Metal-Oxide-Semiconductor CapacitorLin, Yueh-Chin; Chang, Chia-Hua; Kakushima, Kuniyuki; Iwai, Hiroshi; Shie, Tin-En; Huang, Guan-Ning; Lu, Po-Ching; Lin, Ting-Chun; Chang, Edward Yi; 交大名義發表; National Chiao Tung University
顯示 1 到 15 筆資料，總共 15 筆