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公開日期標題作者
2005Adaptive finite volume simulation of electrical characteristics of organic light emitting diodesLi, YM; Chen, P; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
2005Application of parallel adaptive computing technique to polysilicon thin-film transistor simulationLi, YM; 電信工程研究所; Institute of Communications Engineering
1-八月-2002Calculation of induced electron states in three-dimensional semiconductor artificial moleculesLi, YM; Voskoboynikov, O; Lee, CP; Sze, SM; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-九月-2005A comparative study of electrical characteristic on sub-10-nm double-gate MOSFETsLi, YM; Chou, HM; 電信工程研究所; 友訊交大聯合研發中心; Institute of Communications Engineering; D Link NCTU Joint Res Ctr
2003A computational efficient algorithm for protein sequence classificationLi, YM; Lu, HM; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
2001A computational efficient method for HBT intermodulation distortions and two-tone characteristics simulationHuang, KY; Li, YM; Lee, CP; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003A computational investigation of electron energy states for vertically coupled semiconductor quantum dotsLi, YM; Lu, HM; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-五月-2002A computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dotsLi, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
15-十一月-2001Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dotsLi, YM; Voskoboynikov, O; Lee, CP; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Computer simulation of germanium nanowire field effect transistorsLi, YM; Chou, HM; Lee, BS; Lu, CS; Yu, SM; 電信工程研究所; Institute of Communications Engineering
1-八月-2004Computer simulation of multifinger heterojunction bipolar transistor with self-heating and thermal coupling modelsHuang, KY; Li, YM; Lee, CP; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
10-六月-2003Dependence of energy gap on magnetic field in semiconductor nano-scale quantum ringsLi, YM; Lu, HM; Voskoboynikov, O; Lee, CP; Sze, SM; 交大名義發表; National Chiao Tung University
1-八月-2002A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFETLi, YM; Chao, TS; Sze, SM; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-四月-2002Effect of shape and size on electron transition energies of InAs semiconductor quantum dotsLi, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-五月-2006Effective electrostatic discharge protection circuit design using novel fully silicided N-MOSFETs in sub-100-nm device era.Lee, JW; Li, YM; 電信工程研究所; 友訊交大聯合研發中心; Institute of Communications Engineering; D Link NCTU Joint Res Ctr
1-十一月-2001Electron energy level calculations for cylindrical narrow gap semiconductor quantum dotLi, YM; Liu, JL; Voskoboynikov, O; Lee, CP; Sze, SM; 應用數學系; 電子工程學系及電子研究所; Department of Applied Mathematics; Department of Electronics Engineering and Institute of Electronics
15-十二月-2001Electron energy state dependence on the shape and size of semiconductor quantum dotsLi, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-四月-2004Electron transition energy for vertically coupled InAs/GaAs semiconductor quantum dots and ringsLi, YM; Lu, HM; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-四月-2004Electrostatic discharge protection under pad design for copper-low-K VLSI circuitsLee, JW; Li, YM; Chao, A; Tang, H; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
2001Energy and coordinate dependent effective mass and confined electron states in quantum dotsLi, YM; Voskoboynikov, O; Lee, CP; Sze, SM; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
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