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顯示 1 到 17 筆資料，總共 17 筆
公開日期標題作者
1-四月-2006AC power loss and signal coupling in very large scale integration backend interconnectsChen, CC; Kao, HL; Liao, CC; Chin, A; McAlister, SP; Chi, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Bias-temperature instability on fully silicided-germanided gates/high-k Al2O3CMOSFETsLiao, CC; Yu, DS; Cheng, CF; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004The copper contamination effect of Al2O3 gate dielectric on SiLiao, CC; Cheng, CF; Yu, DS; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Design of efficient high-gower diode-end-pumped TEMoo Nd : YVO4 laserChen, YF; Liao, CC; Lan, YP; Wang, SC; 電子物理學系; Department of Electrophysics
1-四月-2000Determination of the Auger upconversion rate in fiber-coupled diode end-pumped Nd : YAG and Nd : YVO4 crystalsChen, YF; Liao, CC; Lan, YP; Wang, SC; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-六月-2005The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETsYu, DS; Liao, CC; Cheng, CF; Chin, A; Li, MF; McAlister, SP; 奈米科技中心; Center for Nanoscience and Technology
1-十月-1999Efficient high-power diode-end-pumped TEM00 Nd : YVO4 laserChen, YF; Huang, TM; Liao, CC; Lan, YP; Wang, SC; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-五月-1999Electrical characterization of Al2O3 on Si from thermally oxidized AlAs and AlLiao, CC; Chin, A; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2006Electrical-stress effects and device modeling of 0.18-mu m RF MOSFETsKao, HL; Chin, A; Liao, CC; Chen, CC; McAlister, SP; Chi, CC; 奈米科技中心; Center for Nanoscience and Technology
2004High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnologyChin, A; Kao, HL; Yu, DS; Liao, CC; Zhu, C; Li, MF; Zhu, SY; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstromChin, A; Wu, YH; Chen, SB; Liao, CC; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1997In0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InPChin, A; Liao, CC; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1997Investigation of Si-doped p-type AlGaAs/GaAs, AlGaAs/InGaAs quantum well infrared photodetectors and multiquantum wells grown on (311)A GaAsChin, A; Liao, CC; Chu, J; Li, SS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-十一月-2004Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristicsSun, CL; Chen, SY; Liao, CC; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2005Reducing AC power consumption by three-dimensional integration of Ge-on-insulator CMOS on 1-poly-6-metal 0.18 mu m Si MOSFETsYu, DS; Liao, CC; Chen, CC; Lee, CF; Cheng, CF; Chin, A; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2005Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devicesYu, DS; Chin, A; Liao, CC; Lee, CF; Cheng, CF; Li, MF; Yoo, WJ; McAlister, SP; 奈米科技中心; Center for Nanoscience and Technology
2005Very high kappa and high density TiTaO MIM capacitors for analog and RF applicationsChiang, KC; Chin, A; Lai, CH; Chen, WJ; Cheng, CF; Hung, BF; Liao, CC; 電機學院; College of Electrical and Computer Engineering
顯示 1 到 17 筆資料，總共 17 筆