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11-九月-2017Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memoryChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen; 資訊工程學系; 電子工程學系及電子研究所; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
20-七月-2015Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double formingSimanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2015Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrodeSimanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
27-一月-2014Forming-free bipolar resistive switching in nonstoichiometric ceria filmsIsmail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
4-三月-2019Impact of barrier layer on HfO2-based conductive bridge random access memoryLin, Chun-An; Huang, Chu-Jie; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-五月-2016Impacts of Co doping on ZnO transparent switching memory device characteristicsSimanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 資訊工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
1-一月-2014IMPROVEMENT OF RESISTIVE SWITCHING PROPERTIES OF Ti/ZrO2/Pt WITH EMBEDDED GERMANIUMLin, Chun-An; Panda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2018Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access MemoryLin, Chun-An; Dai, Guang-Jyun; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2014Resistive switching characteristics of Pt/CeOx/TiN memory deviceIsmail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
10-二月-2014Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large enduranceHuang, Chun-Yang; Huang, Chung-Yu; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 10 筆資料，總共 10 筆