1. 目前位置：

瀏覽 的方式： 作者 Panda, Debashis

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 16 筆資料，總共 16 筆
公開日期標題作者
10-一月-2018A Collective Study on Modeling and Simulation of Resistive Random Access MemoryPanda, Debashis; Sahu, Paritosh Piyush; Tseng, Tseung Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2013Enhanced charge storage characteristics of nickel nanocrystals embedded flash memory structuresRay, Sounak K.; Panda, Debashis; Aluguri, Rakesh; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2020Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic LearningJung, Pei-Yu; Panda, Debashis; Chandrasekaran, Sridhar; Rajasekaran, Sailesh; Tseng, Tseung-Yuen; 交大名義發表; 材料科學與工程學系; 電子工程學系及電子研究所; National Chiao Tung University; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
20-七月-2015Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double formingSimanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2019Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing SchemeChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Panda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
1-十一月-2015Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrodeSimanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
27-一月-2014Forming-free bipolar resistive switching in nonstoichiometric ceria filmsIsmail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
15-三月-2013Growth, dielectric properties, and memory device applications of ZrO2 thin filmsPanda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-五月-2016Impacts of Co doping on ZnO transparent switching memory device characteristicsSimanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 資訊工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
1-一月-2014IMPROVEMENT OF RESISTIVE SWITCHING PROPERTIES OF Ti/ZrO2/Pt WITH EMBEDDED GERMANIUMLin, Chun-An; Panda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2019Improving linearity by introducing Al in HfO2 as a memristor synapse deviceChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Saminathan, R.; Panda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
1-十月-2013One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applicationsPanda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-十月-2014Perovskite Oxides as Resistive Switching Memories: A ReviewPanda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
12-三月-2012Resistive switching characteristics of nickel silicide layer embedded HfO2 filmPanda, Debashis; Huang, Chun-Yang; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-十一月-2019Role of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitorPattanayak, Bhaskar; Simanjuntak, Firman Mangasa; Panda, Debashis; Yang, Chih-Chieh; Kumar, Amit; Phuoc-Anh Le; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; 電機工程學系; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
19-八月-2016Status and Prospects of ZnO-Based Resistive Switching Memory DevicesSimanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 16 筆資料，總共 16 筆