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公開日期標題作者
1995Characterization and optimization of NO-nitrided gate oxide by RTPSun, SC; Chen, CH; Yen, DLW; Lin, CJ; 奈米中心; Nano Facility Center
1995A comparative study of CVD TiN and CVD TaN diffusion barriers for copper interconnectionSun, SC; Tsai, MH; Chiu, HT; Chuang, SH; Tsai, CE; 奈米中心; Nano Facility Center
1-五月-1996Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and SiTsai, MH; Sun, SC; Tsai, CE; Chuang, SH; Chiu, HT; 應用化學系; 電子工程學系及電子研究所; 奈米中心; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-五月-1996Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and SiTsai, MH; Sun, SC; Tsai, CE; Chuang, SH; Chiu, HT; 應用化學系; 電子工程學系及電子研究所; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics
1-二月-1999Effect of bottom electrode materials and annealing treatments on the electrical characteristics of Ba0.47Sr0.53TiO3 film capacitorsTsai, MS; Sun, SC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1999Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO3 capacitorsTsai, MS; Sun, SC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1997Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared by radio-frequency magnetron sputteringTsai, MS; Sun, SC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
29-一月-1996Effect of rapid thermal annealing on the electrical and physical properties of metalorganic chemical-vapor-deposited TiNSun, SC; Tsai, MH; 奈米中心; Nano Facility Center
1-三月-1997Effects of electrode materials and annealing ambients on the electrical properties of TiO2 thin films by metalorganic chemical vapor depositionSun, SC; Chen, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1998Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin filmsTsai, MS; Sun, SC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1998Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin filmsTsai, MS; Sun, SC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997Evaluation of PTFE nanoemulsion as a low dielectric constant material ILDSun, SC; Chiang, YC; Rosenmayer, CT; Teguh, J; Wu, H; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
1995Gate oxynitride grown in N2O and annealed in no using rapid thermal processingSun, SC; Chen, CH; Lou, JC; Yen, LW; Lin, CJ; 電機學院; College of Electrical and Computer Engineering
1-七月-1996Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2OSun, SC; Chen, TF; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-七月-1996Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2OSun, SC; Chen, TF; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-十二月-1995Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applicationsTsai, MH; Sun, SC; Lee, CP; Chiu, HT; Tsai, CE; Chuang, SH; Wu, SC; 應用化學系; 電子工程學系及電子研究所; 奈米中心; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
4-三月-1996Metalorganic chemical vapor deposition of tungsten nitride for advanced metallizationTsai, MH; Sun, SC; Chiu, HT; Chuang, SH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1995MOS characteristics of N2O-grown and NO-annealed oxynitridesSun, SC; Chen, CH; Lou, JC; 奈米中心; Nano Facility Center
1995Performance of MOCVD tantalum nitride diffusion barrier for copper metallizationSun, SC; Tsai, MH; Tsai, CE; Chiu, HT; 奈米中心; Nano Facility Center
1995Properties of metalorganic chemical vapor deposited tantalum nitride thin filmsSun, SC; Tsai, MH; Tsai, CE; Chiu, HT; 奈米中心; Nano Facility Center
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