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顯示 1 到 11 筆資料，總共 11 筆
公開日期標題作者
2000Auger recombination enhanced hot carrier degradation in nMOSFETs with positive substrate biasChiang, LP; Tsai, CW; Wang, T; Liu, UC; Wang, MC; Hsia, LC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2003Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate biasTsai, CW; Chen, MC; Ku, SH; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1999A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxidesZous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2005Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-XTiX)O-3 ferroelectric memoryTsai, CW; Lai, SC; Yen, CT; Lien, HM; Lung, HL; Wu, TB; Wang, TH; Liu, R; Lu, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2003Negative substrate bias enhanced breakdown hardness in ultra-thin oxide pMOSFETsWang, TH; Tsai, CW; Chen, MC; Chan, CT; Chiang, HK; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2006A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transientWang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETsChan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETsChen, MC; Tsai, CW; Gu, SH; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2003Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETsTsai, CW; Chen, MC; Gu, SH; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-八月-1999Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxidesZous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETsTsai, CW; Gu, SH; Chiang, LP; Wang, TH; Liu, YC; Huang, LS; Wang, MC; Hsia, LC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 11 筆資料，總共 11 筆