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顯示 1 到 12 筆資料，總共 12 筆
公開日期標題作者
1-一月-2018Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memoryLu, C. C.; Cheng, C. C.; Chiu, H. P.; Lin, W. L.; Chen, T. W.; Ku, S. H.; Tsai, Wen-Jer; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
17-七月-2017Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal methodLiu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Chip-Level Characterization and RTN-Induced Error Mitigation beyond 20nm Floating Gate Flash MemoryLin, T. W.; Ku, S. H.; Cheng, C. H.; Lee, C. W.; Ijen-Huang; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
一月-2017Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash MemoryLiu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
一月-2017Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash MemoryLiu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash MemoryKu, S. H.; Lin, T. W.; Cheng, C. H.; Lee, C. W.; Chen, Ti-Wen; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2019Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell StringLin, Wei-Liang; Tsai, Wen-Jer; Cheng, C. C.; Ku, S. H.; Liu, Lenvis; Hwang, S. W.; Lu, Tao-Cheng; Chen, Kuang-Chao; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Hot-Carrier Injection-Induced Disturb and Improvement Methods in 3D NAND Flash MemoryLin, Wei-Liang; Tsai, Wen-Jer; Cheng, C. C.; Lu, Chun-Chang; Ku, S. H.; Chang, Y. W.; Wu, Guan-Wei; Liu, Lenvis; Hwang, S. W.; Lu, Tao-Cheng; Chen, Kuang-Chao; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2019Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on ${V}_{{t}}$ Retention Loss in a Multilevel Charge Trap Flash MemoryLiu, Yu-Heng; Zhan, Ting-Chien; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2009A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge TransportWang, Tahui; Tang, Chun-Jung; Li, C. -W.; Lee, Chih Hsiung; Ou, T. -F; Chang, Yao-Wen; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, K. -C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2016Polycrystalline-Silicon Channel Trap Induced Transient Read Instability in a 3D NAND Flash Cell StringTsai, Wen-Jer; Lin, W. L.; Cheng, C. C.; Ku, S. H.; Chou, Y. L.; Liu, Lenvis; Hwang, S. W.; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004對於利用氮化矽局部電荷儲存之快閃記憶元件可靠度問題的探討蔡文哲; Tsai, Wen-Jer; 汪大暉; Wang, Tahui; 電子研究所
顯示 1 到 12 筆資料，總共 12 筆