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公開日期標題作者
1999A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxidesZous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2005Design of microstrip bandpass filters with a dual-passband responseKuo, JT; Yeh, TH; Yeh, CC; 電信工程研究所; Institute of Communications Engineering
1-六月-2005Factors affecting the safety performance of bus companies - The experience of Taiwan bus deregulationChang, HL; Yeh, CC; 運輸與物流管理系 註：原交通所+運管所; Department of Transportation and Logistics Management
2004Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping techniqueGu, SH; Wang, MT; Chan, CT; Zous, NK; Yeh, CC; Tsai, WJ; Lu, TC; Wang, TH; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2004The life cycle of the policy for preventing road accidents: an empirical example of the policy for reducing drunk driving crashes in TaipeiChang, HL; Yeh, CC; 運輸與物流管理系 註：原交通所+運管所; Department of Transportation and Logistics Management
1-九月-2004A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cellYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2005A novel fully CMOS process compatible PREM for SOC applicationsYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Zous, NK; Chin, CY; Chen, YR; Chen, MS; Ting, WC; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2005A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applicationsYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Chen, MS; Liao, YY; Ting, WC; Ku, YHJ; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2003A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memoriesYeh, CC; Fan, TH; Lu, TC; Wang, TH; Pan, S; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2004Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cellTsai, WJ; Yeh, CC; Zous, NK; Liu, CC; Cho, SK; Wang, TH; Pan, SC; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001The relationship between the working pressure and accident risks for aggregate-hauling vehicle drivers in TaiwanChang, HL; Yeh, CC; 運輸與物流管理系 註：原交通所+運管所; Department of Transportation and Logistics Management
1-十一月-2002Role of positive trapped charge in stress-induced leakage current for flash EEPROM devicesWang, TH; Zous, NK; Yeh, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1998Site characterization of a dynamically compacted silty fine sandHuang, AB; Chang, JW; Chen, DDS; Yeh, CC; 土木工程學系; Department of Civil Engineering
1-十二月-2003The Taiwan system of innovation in the tool machine industry: a case studyYeh, CC; Chang, PL; 經營管理研究所; Institute of Business and Management
2-八月-1999Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxidesZous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 15 筆資料，總共 15 筆