Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

標題:	Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode
作者:	Cheng, C. H. Pan, H. C. Yang, H. J. Hsiao, C. N. Chou, C. P. McAlister, S. P. Chin, Albert 機械工程學系電子工程學系及電子研究所 Department of Mechanical Engineering Department of Electronics Engineering and Institute of Electronics
關鍵字:	high-kappa;Ir;metal-insulator-metal (MIM);TiLaO
公開日期:	1-Dec-2007
摘要:	We have fabricated high-kappa. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 x 10(-7) A/cm(2) was obtained at 125 degrees C for 24-fF/mu m(2) density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset.
URI:	http://dx.doi.org/10.1109/LED.2007.909612 http://hdl.handle.net/11536/10061
ISSN:	0741-3106
DOI:	10.1109/LED.2007.909612
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	28
Issue:	12
起始頁:	1095
結束頁:	1097
Appears in Collections:	Articles

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