深次微米多晶矽鍺閘極金氧半電晶體之研製

標題:	深次微米多晶矽鍺閘極金氧半電晶體之研製 Fabrication and Charazterization of Deep Submicron MOS Transistor with Poly-SiGe Gate
作者:	黃調元 TIAO-YUANHUANG 交通大學電子工程研究所
公開日期:	2000
官方說明文件#:	NSC89-2215-E009-038
URI:	http://hdl.handle.net/11536/100704 https://www.grb.gov.tw/search/planDetail?id=720337&docId=135307
Appears in Collections:	Research Plans

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