金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(II)

標題:	金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(II) Metal-Gate/High-K Cmosfets for 45 to 22 Nm Technology Nodes (II)
作者:	荊鳳德 CHIN ALBERT 國立交通大學電子工程學系及電子研究所
公開日期:	2009
官方說明文件#:	NSC98-2120-M009-005
URI:	http://hdl.handle.net/11536/101497 https://www.grb.gov.tw/search/planDetail?id=1892668&docId=313302
Appears in Collections:	Research Plans

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