電漿製程對N-型及P-型金氧半場效電晶體之損傷機制研究

標題:	電漿製程對N-型及P-型金氧半場效電晶體之損傷機制研究 Mechanism of Plasma Process Induced Damage on N-type and P-type MOSFET
作者:	崔秉鉞 Bing-YueTsui 國立交通大學電子工程學系
公開日期:	2000
官方說明文件#:	NSC89-2215-E009-074
URI:	http://hdl.handle.net/11536/101903 https://www.grb.gov.tw/search/planDetail?id=573684&docId=107118
Appears in Collections:	Research Plans

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