無線通訊用2.4V伏特砷化鎵高電子遷移率功率電晶體(Power HEMT)研發計畫

Full metadata record

DC Field	Value	Language
dc.contributor.author	張翼	en_US
dc.date.accessioned	2014-12-13T10:50:08Z	-
dc.date.available	2014-12-13T10:50:08Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2213-E009-047	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/101992	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=525766&docId=95661	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	砷化鎵	zh_TW
dc.subject	功率電晶體	zh_TW
dc.subject	高電子遷移率功率電晶體	zh_TW
dc.subject	無線通訊	zh_TW
dc.subject	GaAs	en_US
dc.subject	Power transistor	en_US
dc.subject	Power HEMT	en_US
dc.subject	Wireless communication	en_US
dc.title	無線通訊用2.4V伏特砷化鎵高電子遷移率功率電晶體(Power HEMT)研發計畫	zh_TW
dc.title	The Development of 2.4V GaAs Power HEMT for Wireless Commumication Application	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學材料科學與工程系	zh_TW
Appears in Collections:	Research Plans

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