無線通訊用2.4V伏特砷化鎵高電子遷移率功率電晶體(Power HEMT)研發計畫

標題:	無線通訊用2.4V伏特砷化鎵高電子遷移率功率電晶體(Power HEMT)研發計畫 The Development of 2.4V GaAs Power HEMT for Wireless Commumication Application
作者:	張翼交通大學材料科學與工程系
關鍵字:	砷化鎵;功率電晶體;高電子遷移率功率電晶體;無線通訊;GaAs;Power transistor;Power HEMT;Wireless communication
公開日期:	2000
官方說明文件#:	NSC89-2213-E009-047
URI:	http://hdl.handle.net/11536/101992 https://www.grb.gov.tw/search/planDetail?id=525766&docId=95661
Appears in Collections:	Research Plans

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