標題: Performance enhancement by local strain in (110) channel n-channel metal-oxide-semicondiactor field-effect transistors on (111) substrate
作者: Lo, Wen-Cheng
Ku, Ya-Hsin
Lee, Yao-Jen
Chao, Tien-Sheng
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: strain;(111) substrate;stack gate;charge pumping
公開日期: 1-Sep-2007
摘要: In this study, an n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) fabricated with local strained channel techniques on a (111) Si substrate using a SiN capping layer with high mechanical stress and the stack gate of amorphous silicon (alpha-Si) and polycrystal line silicon (poly-Si) was investigated. By using these techniques, the performance improvement of the nMOSFETs in the (110) channel direction on the (111) substrate was achieved. The on-current and transconductance (G) increased with increasing SiN capping layer or alpha-Si layer thickness. Our experimental results show that devices with a 700 A a-Si layer show a 6.7% on-current improvement percentage relative to those with a 200 A. alpha-Si layer, and a corresponding G. improvement percentage of 10.2%. In addition, charge pumping current/interface state density decreased for the samples with a thicker SiN layer.
URI: http://dx.doi.org/10.1143/JJAP.46.5715
http://hdl.handle.net/11536/10408
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.5715
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 9A
起始頁: 5715
結束頁: 5718
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