FLEXIBLE NON-VOLATILE MEMORY

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DC 欄位	值	語言
dc.contributor.author	LIU Po-Tsun	en_US
dc.contributor.author	FAN Yang-Shun	en_US
dc.date.accessioned	2014-12-16T06:14:50Z	-
dc.date.available	2014-12-16T06:14:50Z	-
dc.date.issued	2014-03-06	en_US
dc.identifier.govdoc	H01L045/00	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104947	-
dc.description.abstract	A manufacturing method for manufacturing a flexible non-volatile memory is provided. The manufacturing method comprises the steps outlined below. A flexible substrate is provided. A planarization layer is formed on the flexible substrate. A metal bottom electrode layer is deposited on the planarization layer. A mask is formed to define a plurality of patterns. An AZTO layer having a plurality of electrically independent AZTO cells is deposited on the metal bottom electrode layer corresponding to the patterns. A top electrode layer is deposited on the AZTO layer corresponding to the AZTO cells to form a plurality of non-volatile memory cells.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	FLEXIBLE NON-VOLATILE MEMORY	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20140061569	zh_TW
顯示於類別：	專利資料

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