METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS

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DC 欄位	值	語言
dc.contributor.author	Wu YewChung Sermon	en_US
dc.contributor.author	Chen Yu-Chung	en_US
dc.date.accessioned	2014-12-16T06:15:02Z	-
dc.date.available	2014-12-16T06:15:02Z	-
dc.date.issued	2013-01-03	en_US
dc.identifier.govdoc	H01L029/06	zh_TW
dc.identifier.govdoc	H01L021/302	zh_TW
dc.identifier.govdoc	H01L021/26	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105093	-
dc.description.abstract	The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming on the growing substrate to have plural grooves; forming a semiconductor element layer on the growing substrate; and changing the temperature of the growing substrate and the semiconductor element layer so as to separate the semiconductor element layer from the growing substrate.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20130001752	zh_TW
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