標題: | Fully-depleted SOI MOSFET device and process for fabricating the same |
作者: | Tsui, Bing-Yue Lin, Chia-Pin |
公開日期: | 16-Nov-2006 |
摘要: | The present invention proposes a nano-scale high-performance SOI MOSFET device and a process for manufacturing the same. The device is characterized by comprising: a metal oxide semiconductor, formed on the SOI substrate; a silicide layer (05), wherein a gate consists of a single full silicide gate (10), a high-K dielectric layer (08) and a part for work function modification (09); and source/drain (6) are complete through a silicide reaction and has a modified Schottky junction. |
官方說明文件#: | H01L021/8238 H01L027/12 H01L029/76 H01L029/94 H01L021/44 |
URI: | http://hdl.handle.net/11536/105689 |
專利國: | USA |
專利號碼: | 20060255405 |
Appears in Collections: | Patents |
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