Title: Characterization of antenna effect by nondestructive gate current measurement
Authors: Lin, HC
Chien, CH
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: plasma;metal etching;antenna effect;damage;gate current;threshold voltage
Issue Date: 15-Aug-1996
Abstract: A novel method is proposed for the effective characterization of plasma-charge-induced damage on thin gate oxides. We have found that the gate current measured at V-g(gate voltage) = V-th(threshold voltage) under a low drain bias (e.g., 0.1 V) is a good indicator of the damage. Since the proposed method requires only low bias voltages, it does not cause additional damage to the devices. The proposed gate current measurement is also easy to incorporate to device measurement routines without an extra stressing step, and thus provides a simple and efficient damage indicator for studying plasma-charge-induced damage.
URI: http://hdl.handle.net/11536/1106
ISSN: 0021-4922
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 35
Issue: 8B
Begin Page: L1044
End Page: L1046
Appears in Collections:Articles