| 標題: | Very high density (44 fF/mu m(2)) SrTiO3 MIM capacitors for RF applications |
| 作者: | Chiang, K. C. Lin, J. W. Pan, H. C. Hsiao, C. N. Chen, W. J. Kao, H. L. Hsieh, I. J. Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 2007 |
| 摘要: | We demonstrate a high-performance TaN/SrTiO3/TaN metal-insulator- metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fF/mu m(2), small voltage linearity alpha of 54 ppm/V-2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits. (c) 2007 The Electrochemical Society. |
| URI: | http://hdl.handle.net/11536/11330 http://dx.doi.org/10.1149/1.2431323 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.2431323 |
| 期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
| Volume: | 154 |
| Issue: | 3 |
| 起始頁: | H214 |
| 結束頁: | H216 |
| Appears in Collections: | Articles |
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- RFIC TaN/SrTio(3)/TaN MIM capacitors with 35 fF/mu m(2) capacitance density / Huang, C. C.;Chiang, K. C.;Kao, H. L.;Chin, Albert;Chen, W. J.
- Very high-density (23 fF/mu m(2)) RF MIM capacitors using high-k TaTiO as the dielectric / Chiang, KC;Lai, CH;Chin, A;Wang, TJ;Chiu, HF
- High-density MIM capacitors using Al2O3 and AlTiOx dielectrics / Chen, SB;Lai, CH;Chin, A;Hsieh, JC;Liu, J
- Very high density RF MIM capacitor compatible with VLSI / Chiang, KC;Lai, CH;Chin, A;Kao, HL;McAlister, SP
- High Capacitance Density and Thermal Leakage Improvement by Using High-kappa Al2O3-Doped SrTiO3 MIM Capacitors / Huang, C. C.;Cheng, C. H.;Lin, C. W.;Chang, L. M.
- High Capacitance Density and Thermal Leakage Improvement by Using High-kappa Al(2)O(3)-Doped SrTiO(3) MIM Capacitors / Huang, C. C.;Cheng, C. H.;Lin, C. W.;Chang, L. M.
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