標題: Effect of gate metal on polymer transistor with glass substrate
作者: Meng, Hsin-Fei
Liu, Chien-Cheng
Jiang, Chin-Jung
Yeh, Yu-Lin
Horng, Sheng-Fu
Hsu, Chain-Shu
應用化學系
物理研究所
Department of Applied Chemistry
Institute of Physics
公開日期: 11-Dec-2006
摘要: Poly(3-hexylthiophene) (P3HT) field-effect transistors (FETs) are fabricated on glass substrates with SiO2 as a gate dielectric over the gate. Indium tin oxide (ITO), Al, and Cr are employed as gate metals. For spin-coated FET, the mobility increases from 10(-4)-10(-5) cm(2)/V s for ITO and Al gates to 10(-2) cm(2)/V s for Cr gate. After O-2 plasma treatment, the SiO2 roughness can be made as low as 0.7 nm. The mobility is further improved up to 0.3 cm(2)/V s by dip-coating P3HT. "Crossed rods" such as morphology can be observed in dip-coated FET with high mobility, indicating high degree of self-assembly facilitated by the flat SiO2 surface over Cr gate. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2403921
http://hdl.handle.net/11536/11440
ISSN: 0003-6951
DOI: 10.1063/1.2403921
期刊: APPLIED PHYSICS LETTERS
Volume: 89
Issue: 24
結束頁: 
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