標題: | Effect of gate metal on polymer transistor with glass substrate |
作者: | Meng, Hsin-Fei Liu, Chien-Cheng Jiang, Chin-Jung Yeh, Yu-Lin Horng, Sheng-Fu Hsu, Chain-Shu 應用化學系 物理研究所 Department of Applied Chemistry Institute of Physics |
公開日期: | 11-十二月-2006 |
摘要: | Poly(3-hexylthiophene) (P3HT) field-effect transistors (FETs) are fabricated on glass substrates with SiO2 as a gate dielectric over the gate. Indium tin oxide (ITO), Al, and Cr are employed as gate metals. For spin-coated FET, the mobility increases from 10(-4)-10(-5) cm(2)/V s for ITO and Al gates to 10(-2) cm(2)/V s for Cr gate. After O-2 plasma treatment, the SiO2 roughness can be made as low as 0.7 nm. The mobility is further improved up to 0.3 cm(2)/V s by dip-coating P3HT. "Crossed rods" such as morphology can be observed in dip-coated FET with high mobility, indicating high degree of self-assembly facilitated by the flat SiO2 surface over Cr gate. (c) 2006 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2403921 http://hdl.handle.net/11536/11440 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2403921 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 89 |
Issue: | 24 |
結束頁: | |
顯示於類別: | 期刊論文 |