完整後設資料紀錄
DC 欄位語言
dc.contributor.authorShih, Jian-Yuen_US
dc.contributor.authorChen, Yen-Chien_US
dc.contributor.authorChiu, Chih-Hungen_US
dc.contributor.authorLo, Chung-Lunen_US
dc.contributor.authorChang, Chi-Chungen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2015-07-21T11:20:27Z-
dc.date.available2015-07-21T11:20:27Z-
dc.date.issued2014-10-01en_US
dc.identifier.issn1556-276Xen_US
dc.identifier.urihttp://dx.doi.org/10.1186/1556-276X-9-541en_US
dc.identifier.urihttp://hdl.handle.net/11536/123981-
dc.description.abstractThis paper presents one wafer level packaging approach of quartz resonator based on through-silicon via (TSV) interposer with metal or polymer bonding sealing of frequency components. The proposed silicon-based package of quartz resonator adopts several three-dimensional (3D) core technologies, such as Cu TSVs, sealing bonding, and wafer thinning. It is different from conventional quartz resonator using ceramic-based package. With evaluation of mechanical structure design and package performances, this quartz resonator with advanced silicon-based package shows great manufacturability and excellent performance to replace traditional metal lid with ceramic-based interposer fabrication approach.en_US
dc.language.isoen_USen_US
dc.subjectThree-dimensional (3D) integrationen_US
dc.subjectThrough-silicon via (TSV)en_US
dc.subjectWafer thinningen_US
dc.subjectSealing bondingen_US
dc.titleQuartz resonator assembling with TSV interposer using polymer sealing or metal bondingen_US
dc.typeArticleen_US
dc.identifier.doi10.1186/1556-276X-9-541en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000343930400001en_US
dc.citation.woscount0en_US
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