High work function IrxSi gates on HfAlON p-MOSFETs

標題:	High work function IrxSi gates on HfAlON p-MOSFETs
作者:	Wu, CH Yu, DS Chin, A Wang, SJ Li, MF Zhu, C Hung, BE McAlister, SP 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	HfAlON;IrSi;MOSFET
公開日期:	1-Feb-2006
摘要:	We have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-mn equivalent oxide thickness. After 950 degrees C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm(2)/V.s, and the advantage of being process compatible to the current VLSI fabrication line.
URI:	http://dx.doi.org/10.1109/LED.2005.862687 http://hdl.handle.net/11536/12669
ISSN:	0741-3106
DOI:	10.1109/LED.2005.862687
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	27
Issue:	2
起始頁:	90
結束頁:	92
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.