標題: Temperature effects of n-MOSFET devices with uniaxial mechanical strains
作者: Tsai, MN
Chang, TC
Liu, PT
Cheng, O
Huang, CT
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 2006
摘要: This work presents a means of causing mechanical uniaxial stress in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs). The proposed method provided a valuable reference for research into both strained-Si and the temperature effect. In this article, tensile stress is applied parallel or perpendicular to the channel direction at room and high temperature. The shift in the energy levels of strained silicon depends on the direction of uniaxial strain, and changes the average in-plane transport mass. (c) 2006 The Electrochemical Society.
URI: http://hdl.handle.net/11536/12758
http://dx.doi.org/10.1149/1.2205121
ISSN: 1099-0062
DOI: 10.1149/1.2205121
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 9
Issue: 8
起始頁: G276
結束頁: G278
Appears in Collections:Articles