Suppressing phosphorus diffusion in germanium by carbon incorporation

Abstract

A problem in the Ge MOSFET process is that the phosphor-us for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.