标题: Suppressing phosphorus diffusion in germanium by carbon incorporation
作者: Luo, G
Cheng, CC
Huang, CY
Hsu, SL
Chien, CH
Ni, WX
Chang, CY
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
公开日期: 24-十一月-2005
摘要: A problem in the Ge MOSFET process is that the phosphor-us for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.
URI: http://dx.doi.org/10.1049/el:20052999
http://hdl.handle.net/11536/13054
ISSN: 0013-5194
DOI: 10.1049/el:20052999
期刊: ELECTRONICS LETTERS
Volume: 41
Issue: 24
起始页: 1354
结束页: 1355
显示于类别:Articles


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