标题: | Suppressing phosphorus diffusion in germanium by carbon incorporation |
作者: | Luo, G Cheng, CC Huang, CY Hsu, SL Chien, CH Ni, WX Chang, CY 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 24-十一月-2005 |
摘要: | A problem in the Ge MOSFET process is that the phosphor-us for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation. |
URI: | http://dx.doi.org/10.1049/el:20052999 http://hdl.handle.net/11536/13054 |
ISSN: | 0013-5194 |
DOI: | 10.1049/el:20052999 |
期刊: | ELECTRONICS LETTERS |
Volume: | 41 |
Issue: | 24 |
起始页: | 1354 |
结束页: | 1355 |
显示于类别: | Articles |
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