标题: A Decouple structured Gyroscope with Integrated Readout Circuit on Standard 0.18 mu m 1P6M CMOS Technology
作者: Chien, Chun-Lin
Wen, Kuei-Ann
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: CMOS-MEMS;Gyroscope;readout circuit;capacitive sensing
公开日期: 2016
摘要: A dual proof-mass structured gyroscope integrated with readout circuit have been proposed. The C to V stage is achieved by the differential difference amplifier (DDA) which has advantages of high gain, low temperature and process dependence. Chopper Stabilization (CHS) and Corrected Double Sampling (CDS) is used to suppress low-frequency noise and compensate DC offset. The gain of DDA is 25dB and power consumption of total readout circuit is 791 mu W. The mems part is fabricated with standard 1P6M 0.18um CMOS process and the mechanical sensitivity is 11.26aF/degrees/s. Chip area is 1.9x1.7mm(2).
URI: http://hdl.handle.net/11536/134582
ISBN: 978-1-5090-3219-8
ISSN: 2163-9612
期刊: 2016 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC)
起始页: 15
结束页: 16
显示于类别:Conferences Paper