標題: HfO2 Inter-Poly Dielectric Characteristics with Interface Fluorine Passivation
作者: Chen, Yung-Yu
Hsieh, Chih-Ren
Lu, Kwung-Wen
Lou, Jen-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: flash memory;fluorine;HfO2
公開日期: 2009
摘要: In this paper, the reliabilities and insulating characteristics of the fluorinated hafnium oxide (HIO2) inter-poly dielectric (IPD) through fluorine ion implantation are studied for the first time. HfO2 IPD characteristics are strongly dependent on the fluorine implantation dosage. Due to the terminating dangling bonds and oxygen vacancies, reducing interface oxidation and smoothing interface roughness, optimized fluorinated HfO2 can be used to drastically improve the IPD reliabilities; consequently, this study concludes that fluorinated HfO2 IPD is suitable for mass production applications in the future stacked-gate flash memory technology.
URI: http://dx.doi.org/10.1109/EDSSC.2009.5394289
http://hdl.handle.net/11536/134927
ISBN: 978-1-4244-4297-3
DOI: 10.1109/EDSSC.2009.5394289
期刊: 2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009)
起始頁: 233
結束頁: +
Appears in Collections:Conferences Paper