標題: Electrical Investigation of Cu Pumping in Through-Silicon Vias for BEOL Reliability in 3D Integration
作者: Cheng, Chuan-An
Sugie, Ryuichi
Uchida, Tomoyuki
Chen, Kou-Hua
Chiu, Chi-Tsung
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Cu TSV;Cu pumping
公開日期: 2015
摘要: It is crucial for Cu TSV to be reliable at the back-end-of--line (BEOL) procedure particularly at high temperature process step. Any unreliable Cu TSV may cause residual from thermal stress due to the mismatch of the coefficient of thermal expansion. Therefore, it is important to investigate on the behavior of Cu pumping whether it will affect the electrical performance in BEOL integration. Two sets of Cu pumping with pitch 30 mu m and 40 mu m were annealed to measure their resistance at the temperature lower than 250 degrees C. Based on the results, the narrow pitch of 30 mu m can be applied in post via last process below 250 degrees C for BEOL procedure in 3D integration.
URI: http://hdl.handle.net/11536/135546
ISBN: 978-1-4673-9386-7
ISSN: 2164-0157
期刊: 2015 INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC 2015)
Appears in Collections:Conferences Paper