完整後設資料紀錄
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dc.contributor.authorShih, Jian-Yuen_US
dc.contributor.authorChen, Yen-Chien_US
dc.contributor.authorLee, Shih-Weien_US
dc.contributor.authorHu, Yu-Chenen_US
dc.contributor.authorChiu, Chih-Hungen_US
dc.contributor.authorLo, Chung-Lunen_US
dc.contributor.authorChang, Chi-Chungen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2017-04-21T06:48:56Z-
dc.date.available2017-04-21T06:48:56Z-
dc.date.issued2014en_US
dc.identifier.isbn978-1-4799-7727-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/136339-
dc.description.abstractIn this paper, a novel crystal component package based on silicon TSV interposer substrate is demonstrated by using 3D integration technologies. It is distinct from conventional crystal component using ceramic-based substrate. This crystal component with advanced silicon-based substrate shows great manufacturability to replace traditional fabrication approach. In addition, the SU-8 sealing bonding structure provides the possibility to substitute for the conventional metal lid with reliability investigation. Finally, a novel silicon-based crystal component package with 3D integration is successfully fabricated through general semiconductor techniques to replace traditional manufacture.en_US
dc.language.isoen_USen_US
dc.titleAdvanced Crystal Component Package with Silicon TSV Interposer Using 3D Integration and Novel SU-8 Polymer Sealing Bonding Structureen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 9TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT)en_US
dc.citation.spage302en_US
dc.citation.epage305en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380572700069en_US
dc.citation.woscount0en_US
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