標題: Novel program versus disturb window characterization for split-gate flash cell
作者: Sung, HC
Lei, TF
Hsu, TH
Kao, YC
Lin, YT
Wang, CS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: disturb;Flash memory;operation window;program;split-gate
公開日期: 1-Mar-2005
摘要: In this letter, a new methodology for program versus disturb window characterization on split gate Flash cell is presented for the first time. The window can be graphically illustrated in V-wI (word-line)-V-ss (source) domain under a given program current. This method can help us understand quantitatively how the window shifts versus bias conditions and find the optimal program condition. The condition obtained by this method can have the largest tolerance for program, bias variations. This methodology was successfully implemented in 0.18-mum triple self-aligned (SA3) split-gate cell characterization to provide program condition for 32 M products.
URI: http://dx.doi.org/10.1109/LED.2004.842643
http://hdl.handle.net/11536/13958
ISSN: 0741-3106
DOI: 10.1109/LED.2004.842643
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 3
起始頁: 194
結束頁: 196
Appears in Collections:Articles


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