Single-photon avalanche diodes in 0.18-mu m high-voltage CMOS technology

標題:	Single-photon avalanche diodes in 0.18-mu m high-voltage CMOS technology
作者:	Huang, L. D. Wu, J. Y. Wang, J. P. Tsai, C. M. Huang, Y. H. Wu, D. R. Lin, S. D. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	12-六月-2017
摘要:	We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-mu m high-voltage CMOS technology. Without any technology customization. the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications. (C) 2017 Optical Society of America
URI:	http://dx.doi.org/10.1364/OE.25.013333 http://hdl.handle.net/11536/145674
ISSN:	1094-4087
DOI:	10.1364/OE.25.013333
期刊:	OPTICS EXPRESS
Volume:	25
Issue:	12
起始頁:	13333
結束頁:	13339
顯示於類別：	期刊論文

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