| 標題: | Device Structural Effects on Negative-Capacitance FETs |
| 作者: | Su, Pin You, Wei-Xiang 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 1-Jan-2018 |
| 摘要: | This paper discusses several device structural effects on negative-capacitance FETs (NCFETs) with emphasis on the wide-range average subthreshold swing. We point out and explain the intrinsic difference between SOI and double-gate 2D NCFETs. The impact of drain coupling on the NC effect and its implication on the design of short-channel NC-FinFETs are also addressed. |
| URI: | http://hdl.handle.net/11536/151720 |
| ISBN: | 978-1-5386-7627-1 |
| ISSN: | 2573-5926 |
| 期刊: | 2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) |
| 起始頁: | 0 |
| 結束頁: | 0 |
| Appears in Collections: | Conferences Paper |
- Device Structural Effects, SPICE Modeling and Circuit Evaluation for Negative-Capacitance FETs / Su, Pin;You, Wei-Xiang
- Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance / Huang, Shih-En;Lin, Shih-Han;Su, Pin
- Intrinsic Difference Between 2-D Negative-Capacitance FETs With Semiconductor-on-Insulator and Double-Gate Structures / You, Wei-Xiang;Su, Pin
- Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics / Lin, Cheng-I;Khan, Asif Islam;Salahuddin, Sayeef;Hu, Chenming
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